The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 10, 2006
Filed:
Apr. 28, 2004
Masaaki Shinohara, Itami, JP;
Kozo Watanabe, Yokosuka, JP;
Fukuo Owada, Hitachinaka, JP;
Takashi Aoyama, Hitachinaka, JP;
Masaaki Shinohara, Itami, JP;
Kozo Watanabe, Yokosuka, JP;
Fukuo Owada, Hitachinaka, JP;
Takashi Aoyama, Hitachinaka, JP;
Renesas Technology Corp., Tokyo, JP;
Abstract
A method of manufacture of a semiconductor device uses simplified steps while improving the electrical properties of each element in the semiconductor device. Over a semiconductor substrate, having a memory gate electrode, control gate electrode and gate electrode formed thereover, a silicon oxide film, a silicon nitride film and a silicon oxide film are formed successively. The silicon oxide film formed over the gate electrode is then removed by wet etching. The silicon oxide film, silicon nitride film and silicon oxide film formed over the semiconductor substrate are removed successively by anisotropic dry etching, whereby respective sidewall spacers having a relatively large width and a relatively small width are formed.