The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 10, 2006
Filed:
Jul. 14, 2004
Applicants:
Yun-hsiu Chen, Hsin-Chu, TW;
Syun-ming Jang, Hsin-Chu, TW;
Inventors:
Yun-Hsiu Chen, Hsin-Chu, TW;
Syun-Ming Jang, Hsin-Chu, TW;
Assignee:
Taiwan Semiconductor Manufacturing Co., Ltd., Hsin-Chu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/8238 (2006.01); H01L 21/337 (2006.01); H01L 21/00 (2006.01); H01L 3/112 (2006.01);
U.S. Cl.
CPC ...
Abstract
A method of fabricating a transistor comprises the steps of: forming a gate electrode above a substrate made of a first semiconductor material having a first lattice spacing, forming recesses in the semiconductor substrate at respective locations where a source region and a drain region are to be formed, epitaxially growing a second semiconductor material having a second lattice spacing different from the first lattice spacing in the recesses, and implanting a dopant in the second semiconductor material after the growing step.