The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 03, 2006
Filed:
Jul. 21, 2004
Kenneth C. Johnson, Santa Clara, CA (US);
Kenneth C. Johnson, Santa Clara, CA (US);
Other;
Abstract
An EUV lithography system achieves high-resolution printing without the use of photomasks, projection optics, multilayer mirrors, or an extremely high-power EUV source. The system comprises a xenon laser-produced-plasma (LPP) illumination source (requiring 93 W hemispherical EUV emission in the wavelength range 10–12 nm), all-ruthenium optics (grazing-incidence mirrors and microlenses) and spatial light modulators comprising MEMS-actuated microshutters. Two 300-mm wafers are simultaneously exposed with a single 10 kHz LPP source to achieve a throughput of 6 wafers per hour, per LPP source. The illumination is focused by the microlens arrays onto diffraction-limited (42-nm FWHM) spots on the wafer plane, and the spots are intensity-modulated by the microshutters as they are raster-scanned across the wafer surface to create a digitally synthesized exposure image. The optical path between the source and the microlenses traverses seven grazing-incidence mirrors (two collimator elements and five fold mirrors), which have high reflection efficiency and essentially unlimited wavelength bandpass.