The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 03, 2006
Filed:
Jan. 08, 2004
Arvind Halliyal, Cupertino, CA (US);
Mark T. Ramsbey, Sunnyvale, CA (US);
Hidehiko Shiraiwa, San Jose, CA (US);
Jean Y. Yang, Sunnyvale, CA (US);
Arvind Halliyal, Cupertino, CA (US);
Mark T. Ramsbey, Sunnyvale, CA (US);
Hidehiko Shiraiwa, San Jose, CA (US);
Jean Y. Yang, Sunnyvale, CA (US);
Spansion, LLC, Sunnyvale, CA (US);
Abstract
A process for fabrication of a semiconductor device including an ONO structure as a component of a flash memory device, comprising forming the ONO structure by providing a semiconductor substrate having a silicon surface; forming a first oxide layer on the silicon surface; depositing a silicon nitride layer on the first oxide layer; and forming a top oxide layer on the silicon nitride layer, wherein the top oxide layer is formed by an in-situ steam generation oxidation of a surface of the silicon nitride layer. The semiconductor device may be, e.g., a SONOS two-bit EEPROM device or a floating gate FLASH memory device including an ONO structure.