The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 03, 2006
Filed:
Aug. 12, 2004
Applicant:
Deana R. Delp, Tempe, AZ (US);
Inventor:
Deana R. Delp, Tempe, AZ (US);
Assignee:
Tokyo Electron Limited, Tokyo, JP;
Primary Examiner:
Int. Cl.
CPC ...
G01L 21/30 (2006.01); H01L 21/00 (2006.01);
U.S. Cl.
CPC ...
Abstract
A method and system for determining an endpoint in a (near) real-time environment using statistical process control. By utilizing such control, an endpoint of a semiconductor process (e.g., an etch) can be monitored. Monitoring may lead to increased yields by avoiding or reducing error conditions (e.g., under- or over-etching).
Delp, Deana. (2006). Endpoint detection using laser interferometry (U.S. Patent No. 7115211). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/7115211
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile