The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 26, 2006
Filed:
Dec. 22, 2005
Seo-min Kim, Ichon-shi, KR;
Cheol-kyu Bok, Ichon-shi, KR;
Seo-Min Kim, Ichon-shi, KR;
Cheol-Kyu Bok, Ichon-shi, KR;
Hynix Semiconductor Inc., , KR;
Abstract
The present invention relates to a semiconductor memory device and a method for fabricating the same. Particularly, the semiconductor memory device includes at least more than two capacitors to decrease the thickness of an insulation layer and increase the size of each capacitor, wherein the thickness of the insulation layer and the size of the capacitor are factors for increasing parasitic capacitance and leakage currents. Also, the two capacitors are arranged diagonally, thereby widening the width of each capacitor formed. Furthermore, in case of forming the double capacitors according to the preferred embodiment of the present invention, an additional reticle is not required to form the contact holes for each capacitor due to their inverted disposition relationship.