The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 26, 2006
Filed:
Oct. 15, 2004
Gyeong-su Keum, Suwon-si, KR;
Seung-ki Chae, Seoul, KR;
Hyung-sik Hong, Suwon-si, KR;
Sang-yeob Cha, Seoul, KR;
Jae-hyun Han, Gyeonggi-do, KR;
Tae-sub Im, Suwon-si, KR;
Hyun-kyu Kang, Seoul, KR;
Gil-jung Yun, Yongin-si, KR;
Doo-guen Song, Suwon-si, KR;
Gyeong-Su Keum, Suwon-si, KR;
Seung-Ki Chae, Seoul, KR;
Hyung-Sik Hong, Suwon-si, KR;
Sang-Yeob Cha, Seoul, KR;
Jae-Hyun Han, Gyeonggi-do, KR;
Tae-Sub Im, Suwon-si, KR;
Hyun-Kyu Kang, Seoul, KR;
Gil-Jung Yun, Yongin-si, KR;
Doo-Guen Song, Suwon-si, KR;
Samsung Electronics Co., Ltd., Suwon-si, KR;
Abstract
In an ion implanting apparatus and an ion implanting method using the same, the ion implanting apparatus includes a disk chamber containing a rotatable disk, a wafer mounted on the rotatable disk, and a charge sensor for monitoring a charged state of the wafer, the charge sensor being fixed to the disk chamber to be adjacent to and facing a surface of the wafer. An output of the charge sensor may be used as feedback to control the charged state of the wafer.