The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 26, 2006
Filed:
Apr. 23, 2004
Applicants:
Chun-chieh Lin, Hsin-Chu, TW;
Wen-chin Lee, Hsin-Chu, TW;
Yee-chia Yeo, Kaoshiung, TW;
Chuan-yi Lin, Hsin Chu, TW;
Chenming HU, Hsin-Chu, TW;
Inventors:
Chun-Chieh Lin, Hsin-Chu, TW;
Wen-Chin Lee, Hsin-Chu, TW;
Yee-Chia Yeo, Kaoshiung, TW;
Chuan-Yi Lin, Hsin Chu, TW;
Chenming Hu, Hsin-Chu, TW;
Assignee:
Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/8238 (2006.01); H01L 21/44 (2006.01);
U.S. Cl.
CPC ...
Abstract
Provided is a semiconductor device and a method for its fabrication. The device includes a semiconductor substrate, a first silicide in a first region of the substrate, and a second silicide in a second region of the substrate. The first silicide may differ from the second silicide. The first silicide and the second silicide may be an alloy silicide.