The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 19, 2006
Filed:
May. 03, 2004
Masaki Shiraishi, Hitachi, JP;
Takayuki Iwasaki, Hitachi, JP;
Nobuyoshi Matsuura, Takasaki, JP;
Tomoaki Uno, Takasaki, JP;
Masaki Shiraishi, Hitachi, JP;
Takayuki Iwasaki, Hitachi, JP;
Nobuyoshi Matsuura, Takasaki, JP;
Tomoaki Uno, Takasaki, JP;
Renesas Technology Corp., Tokyo, JP;
Abstract
A power MOS-FET is used as a high side switch transistor for a non-insulated DC/DC converter. An electrode section that serves as a source terminal of the power MOS-FET is connected to one outer lead and two outer leads via bonding wires respectively. The outer lead is an external terminal connected to a path for driving the gate. Each of the outer leads is an external terminal connected to a main current path. Owing to the connection of the main current path and the gate driving path in discrete form, the influence of parasitic inductance can be reduced and voltage conversion efficiency can be improved.