Charged particle beam lithography system, pattern drawing method, and method of manufacturing semiconductor device

Abstract

A charged particle beam lithography system includes: a charged particle beam source which generates a charged particle beam and irradiates a substrate therewith; an aperture in which has been formed a pattern of a shape corresponding to an arbitrary pattern to be drawn; an illuminator which adjusts the diameter of the charged particle beam and illuminates the aperture with the charged particle beam; a first deflector which deflects the charged particle beam by an electrical field to cause the charged particle beam to be incident on an arbitrary pattern, allowing the charged particle beam to pass through the aperture and be reflected back along the optical axis; a first demagnification optical projection system which demagnifies the aperture image of the charged particle beam which has passed through the aperture with the use of an electrical field or electromagnetic field; a second demagnification optical projection system which demagnifies the aperture image of the charged particle beam which has been demagnified by the first demagnification projection optical system, with the use of an electrical field or electromagnetic field to form an image on the substrate; and a beam diameter adjuster which adjusts the illuminator in such a manner that the beam diameter at crossovers of the charged particle beam, formed between the aperture and the first demagnification optical projection system and within the second demagnification optical projection system, is greater than the size of the pattern.