The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 19, 2006

Filed:

Jun. 06, 2003
Applicants:

Robert B. Herring, San Jose, CA (US);

Cole Porter, San Jose, CA (US);

Travis Dodwell, Apple Valley, CA (US);

Ed Nazareno, San Jose, CA (US);

Chris Ratliff, Felton, CA (US);

Anindita Chatterji, Los Altos Hills, CA (US);

Inventors:

Robert B. Herring, San Jose, CA (US);

Cole Porter, San Jose, CA (US);

Travis Dodwell, Apple Valley, CA (US);

Ed Nazareno, San Jose, CA (US);

Chris Ratliff, Felton, CA (US);

Anindita Chatterji, Los Altos Hills, CA (US);

Assignee:

Aviza Technology, Inc., Scotts Valley, CA (US);

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/31 (2006.01); H01L 21/469 (2006.01); H01L 29/76 (2006.01); C23C 16/00 (2006.01);
U.S. Cl.
CPC ...
Abstract

The present invention relates generally to semiconductor fabrication. More particularly, the present invention relates to system and method of selectively oxidizing one material with respect to another material formed on a semiconductor substrate. A hydrogen-rich oxidation system for performing the process are provided in which innovative safety features are included to avoid the dangers to personnel and equipment that are inherent in working with hydrogen-rich atmospheres.


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