The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 19, 2006
Filed:
Jan. 26, 2005
Applicants:
James K. Schaeffer, Iii, Austin, TX (US);
Olubunmi O. Adetutu, Austin, TX (US);
Inventors:
James K. Schaeffer, III, Austin, TX (US);
Olubunmi O. Adetutu, Austin, TX (US);
Assignee:
Freescale Semiconductor, Inc., Austin, TX (US);
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/8238 (2006.01); H01L 29/76 (2006.01);
U.S. Cl.
CPC ...
Abstract
A method for forming a semiconductor device () includes a semiconductor substrate () having a first region (), forming a gate dielectric () over the first region, forming a conductive metal oxide () over the gate dielectric, forming an oxidation resistant barrier layer () over the conductive metal oxide, and forming a capping layer over the oxidation resistant barrier layer. In one embodiment, the conductive metal oxide is IrO, MoO, and RuO, and the oxidation resistant barrier layer includes TiN.