The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 12, 2006
Filed:
Jul. 13, 1998
Atsushi Miyanishi, Tokyo, JP;
Hisashi Matsumoto, Tokyo, JP;
Atsushi Miyanishi, Tokyo, JP;
Hisashi Matsumoto, Tokyo, JP;
Renesas Technology Corp., Tokyo, JP;
Abstract
An active area () is provided with a concave part in its corner portion in a shape along a plan view. An insulating film () encloses this active area. A gate electrode () is arranged on a depressed region (DR) having an edge portion which is located on a low position due to the concave part, while a gate electrode () is arranged on an ordinary region (OR) having an edge portion projecting beyond the depressed region. A gate end cap (margin part) of the gate electrode () has a length x, while that of the gate electrode () has a length x+α. Thus provided is a semiconductor device causing no current defect between source/drain regions even if the active area and an insulating film defining this active area fail to satisfy the layout design following refinement of the semiconductor device.