The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 12, 2006
Filed:
Aug. 06, 2003
Tae-hyun Kim, Suwon-si, KR;
Byoung-moon Yoon, Suwon-si, KR;
Kyung-hyun Kim, Seoul, KR;
Chang-lyong Song, Yongin-si, KR;
Yong-sun Ko, Yongin-si, KR;
Tae-Hyun Kim, Suwon-si, KR;
Byoung-Moon Yoon, Suwon-si, KR;
Kyung-Hyun Kim, Seoul, KR;
Chang-Lyong Song, Yongin-si, KR;
Yong-Sun Ko, Yongin-si, KR;
Samsung Electronics Co., Ltd., Suwon, KR;
Abstract
Disclosed is an organic stripping composition and a method of etching a semiconductor device in which the generation of an Si pitting phenomenon can be prevented. The composition includes a compound including a hydroxyl ion (OH), a compound including a fluorine ion (F) and a sufficient amount of an oxidizing agent to control the pH of the composition within the range of from about 6.5 to about 8.0. The method includes dry etching an oxide by a dry etching using a plasma, and then ashing the etched oxide using an ashing process to remove an organic material. The method further includes supplying the organic stripping composition to remove residues including any residual organic material, a metal polymer, and an oxide type polymer. The stripping composition is stable onto various metals and does not induce the Si pitting phenomenon.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile