The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 7105100 B1

PDF
Full Text
Expired
Date of Patent:
Sep. 12, 2006

Filed:

Sep. 25, 2003
Applicant:

Haruhiro H. Goto, Saratoga, CA (US);

Inventor:

Haruhiro H. Goto, Saratoga, CA (US);

Assignee:

Applied Materials, Inc., Santa Clara, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
B44C 1/22 (2006.01); H01L 21/00 (2006.01); G01L 21/30 (2006.01);
U.S. Cl.
CPC ...
Abstract

A system and method for distributing gas to a substrate in a dry etch chamber make use of different flow channels to distribute the gas to different portions of a substrate. A first flow channel can be oriented to distribute gas to an inner portion of the substrate. A second flow channel can be oriented to distribute gas to an outer portion of the substrate. With different flow channels, the system and method enable separate control of gas distribution for different portions of the substrate. In particular, the flow channels allow separate control of gas flow rate, concentration, and flow time for different areas of the substrate. In this manner, gas distribution can be selectively controlled to compensate for different etch rates across the substrate surface. Also, gas distribution can be controlled as a function of etch rate patterns exhibited by different etch gasses used in successive process steps. Thus, etch uniformity can be enhanced, leading to improvement in the quality of the overall fabrication process. In a semiconductor fabrication processes, enhanced etch uniformity can lead to increased device yield.


Find Patent Forward Citations

Goto, Haruhiro. (2006). System and method for gas distribution in a dry etch process (U.S. Patent No. 7105100). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/7105100

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Loading…