The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 05, 2006

Filed:

Nov. 12, 2003
Applicants:

Takatoshi Ono, Odawara, JP;

Naohito Mizuno, Oita, JP;

Yoshikuni Tateyama, Oita, JP;

Tomoyuki Hirano, Anjo, JP;

Inventors:

Takatoshi Ono, Odawara, JP;

Naohito Mizuno, Oita, JP;

Yoshikuni Tateyama, Oita, JP;

Tomoyuki Hirano, Anjo, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/302 (2006.01);
U.S. Cl.
CPC ...
Abstract

A method for manufacturing a semiconductor device, which includes performing a first chemical mechanical polishing of a surface of an object having an uneven surface by making use of a first polishing liquid containing abrasive particles and a surfactant, and performing a second chemical mechanical polishing of the surface of the object that has been polished by the first chemical mechanical polishing by making use of a second polishing liquid containing abrasive particles and having a concentration of a surfactant lower than that of the first polishing liquid, wherein the first chemical mechanical polishing is switched to the second chemical mechanical polishing when the uneven surface of object is flattened.


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