The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 05, 2006
Filed:
Jan. 14, 2003
Patricia Beauregard Smith, Colleyville, TX (US);
Jiong-ping LU, Richardson, TX (US);
Patricia Beauregard Smith, Colleyville, TX (US);
Jiong-Ping Lu, Richardson, TX (US);
Texas Instruments Incorporated, Dallas, TX (US);
Abstract
A method of manufacturing a semiconductor device includes the steps of providing a semiconductor substrate (), forming a dielectric layer () over the semiconductor substrate (), and etching a trench structure () or a via structure () in the dielectric layer () to expose a portion of a surface of the semiconductor substrate (). The method also includes the steps of treating a surface () of the dielectric layer () with an adhesion solution, such as a reactive plasma including hydrogen, and forming a diffusion barrier layer () over the dielectric layer (). Moreover, the adhesion solution chemically interacts with the surface () of the dielectric layer () and enhances or increases adhesion between dielectric layer () and diffusion barrier layer ().