The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 05, 2006
Filed:
Jun. 10, 2004
Applicants:
El Khakani MY Ali, Saint-Lambert, CA;
Sarkar Dilip K., Montreal, CA;
Luc Ouellet, Granby, CA;
Daniel Brassard, Montreal, CA;
Inventors:
El Khakani My Ali, Saint-Lambert, CA;
Sarkar Dilip K., Montreal, CA;
Luc Ouellet, Granby, CA;
Daniel Brassard, Montreal, CA;
Assignee:
DALSA Semiconductor Inc., Waterloo, CA;
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/8242 (2006.01);
U.S. Cl.
CPC ...
Abstract
A method of making a film with a high dielectric constant uses a spin-on sol-gel process to deposit the film on a substrate, the film having a composition (SiO)(TiO), where 0.50<x<0.75. The resulting film is annealed in an oxygen-containing atmosphere at a temperature lying in the range of 500° C. to 700° C.