The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 29, 2006

Filed:

Sep. 09, 2004
Applicants:

Kyung Joon Han, Palo Alto, CA (US);

Sung-rae Kim, San Jose, CA (US);

Robert Broze, Santa Cruz, CA (US);

Inventors:

Kyung Joon Han, Palo Alto, CA (US);

Sung-Rae Kim, San Jose, CA (US);

Robert Broze, Santa Cruz, CA (US);

Assignee:

Actel Corporation, Mountain View, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/792 (2006.01);
U.S. Cl.
CPC ...
Abstract

A multiple memory layer device has a plurality of stacked memory layers. Each of the memory layers has: a charge generating layer of p-type semiconductor material with a plurality of n-type diffusion regions; an insulating layer disposed over the charge generating layer; a charge storing layer disposed over the insulating layer; and another insulating layer disposed over the charge storing layer. A gate is disposed over the top insulting layer in the uppermost memory layer in the plurality of stacked memory layers.


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