The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 29, 2006
Filed:
Apr. 26, 2004
Miroslav Micovic, Newbury Park, CA (US);
Tahir Hussain, Calabasas, CA (US);
Paul Hashimoto, Los Angeles, CA (US);
Peter W. Deelman, Calabasas, CA (US);
Miroslav Micovic, Newbury Park, CA (US);
Tahir Hussain, Calabasas, CA (US);
Paul Hashimoto, Los Angeles, CA (US);
Peter W. Deelman, Calabasas, CA (US);
HRL Laboratories, LLC, Malibu, CA (US);
Abstract
The present invention provides a GaN based DHFET that helps confine the 2DEG to the channel layer, and reduces the 2DHG. The present invention provides a GaN DHFET having a channel layer comprising GaN and a buffer layer comprising AlGaN. The Al content in the buffer layer is specifically chosen based on the thickness of the channel layer using a graph. By choosing the Al content in the buffer layer and thickness of the channel layer in accordance with the graph provided in the present invention, the ability of the buffer layer to help confine the 2DEG to the channel layer is improved.