The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 29, 2006
Filed:
Dec. 27, 2002
Mark Philip D'evelyn, Niskayuna, NY (US);
Dong-sil Park, Niskayuna, NY (US);
Steven Leboeuf, Schenectady, NY (US);
Larry Rowland, Scotia, NY (US);
Kristi Narang, Voorheesville, NY (US);
Huicong Hong, Niskayuna, NY (US);
Peter M. Sandvik, Guilderland, NY (US);
Mark Philip D'Evelyn, Niskayuna, NY (US);
Dong-Sil Park, Niskayuna, NY (US);
Steven LeBoeuf, Schenectady, NY (US);
Larry Rowland, Scotia, NY (US);
Kristi Narang, Voorheesville, NY (US);
Huicong Hong, Niskayuna, NY (US);
Peter M. Sandvik, Guilderland, NY (US);
General Electric Company, Niskayuna, NY (US);
Abstract
There is provided a GaN single crystal at least about 2 millimeters in diameter, with a dislocation density less than about 10cm, and having no tilt boundaries. A method of forming a GaN single crystal is also disclosed. The method includes providing a nucleation center, a GaN source material, and a GaN solvent in a chamber. The chamber is pressurized. First and second temperature distributions are generated in the chamber such that the solvent is supersaturated in the nucleation region of the chamber. The first and second temperature distributions have different temperature gradients within the chamber.