The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 29, 2006
Filed:
Nov. 07, 2003
Seung-pil Chung, Seoul, KR;
Chang-jin Kang, Suwon, KR;
Jeong-sic Jeon, Kyungki-do, KR;
Kyeong-koo Chi, Seoul, KR;
Seung-young Son, Yongin, KR;
Sang-yong Kim, Yongin, KR;
Seung-pil Chung, Seoul, KR;
Chang-jin Kang, Suwon, KR;
Jeong-sic Jeon, Kyungki-do, KR;
Kyeong-koo Chi, Seoul, KR;
Seung-young Son, Yongin, KR;
Sang-yong Kim, Yongin, KR;
Samsung Electronics Co., Ltd., Kyungki-Do, KR;
Abstract
A semiconductor device including a bit line formed using a damascene technique and a method of fabricating the same. The method includes forming an insulating layer on a substrate, forming a groove by etching the insulating layer to a partial depth, and forming spacers on the inner walls of the groove. An opening is formed by etching the insulating layer disposed under the groove using the spacers as an etch mask. A conductive layer is formed to fill the opening. A capping layer is formed to fill the groove.