The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 29, 2006
Filed:
May. 31, 2005
Min-san Huang, Hsinchu, TW;
Leon Lai, Hsinchu, TW;
Pin-yao Wang, Hsinchu, TW;
Powerchip Semiconductor Corp., Hsinchu, TW;
Abstract
A method of forming contact holes is provided. A substrate having a plurality of device structures is provided. A first dielectric layer and a conductive layer sequentially cover the device structures and the surface of the substrate. A recess is formed in the conductive layer between every two neighboring device structures. A pair of composite spacers is formed in the recess. By using the composite spacers as a mask, a portion of the exposed conductive layer is removed to form a plurality of openings between every two neighboring device structures. A second dielectric layer is then formed on the sidewalls of the openings. A third dielectric layer is formed over the substrate. Portions of the third dielectric layer and the first dielectric layer above the openings are removed to form a plurality of self-aligned contact holes.