The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 29, 2006
Filed:
Mar. 12, 2004
Dustin A. Woodbury, Indian Harbour Beach, FL (US);
Robert J. Kinzig, Melbourne, FL (US);
James Douglas Beasom, Melbourne Village, FL (US);
Timothy A. Valade, Melbourne, FL (US);
Donald F. Hemmenway, Melbourne, FL (US);
Kitty Elshot, Orlando, FL (US);
Dustin A. Woodbury, Indian Harbour Beach, FL (US);
Robert J. Kinzig, Melbourne, FL (US);
James Douglas Beasom, Melbourne Village, FL (US);
Timothy A. Valade, Melbourne, FL (US);
Donald F. Hemmenway, Melbourne, FL (US);
Kitty Elshot, Orlando, FL (US);
Intersil Americas, Inc., Milpitas, CA (US);
Abstract
A method of forming a non-single-crystalline capacitor in an integrated circuit. It includes the steps of forming a first non-single-crystalline layer on a gate dielectric layer of a substrate of an integrated circuit. Next, a capacitor dielectric layer is formed on the first non-single-crystalline layer, and a second non-single-crystalline layer is formed on the capacitor dielectric layer. Portions of the second non-single-crystalline layer are removed to define a top plate of the capacitor. Portions of the capacitor dielectric layer are removed to define a dielectric of the capacitor. Also, portions of the first non-single-crystalline layer are removed to define the bottom plate of the capacitor.