The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 29, 2006
Filed:
Feb. 04, 2004
Applicants:
Abdalla Aly Naem, Overijse, BE;
Visvamohan Yegnashankaran, Redwood City, CA (US);
Inventors:
Abdalla Aly Naem, Overijse, BE;
Visvamohan Yegnashankaran, Redwood City, CA (US);
Assignee:
National Semiconductor Corporation, Santa Clara, CA (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/8238 (2006.01); H01L 21/76 (2006.01);
U.S. Cl.
CPC ...
Abstract
The vertical diffusion of dopants from the gate into the channel region, and the lateral diffusion of dopants from the source and drain regions into the channel region resulting from thermal cycling during the fabrication of a MOS transistor is minimized by forming the source and drain regions in a layer of silicon germanium carbon.