The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 22, 2006

Filed:

Nov. 21, 2002
Applicants:

Akira Nakano, Miyagi-ken, JP;

Tadashi Kumagai, Fukushima-ken, JP;

Tomofumi Oba, Miyagi-ken, JP;

Tadahiro Ohmi, Miyagi-ken, JP;

Inventors:

Akira Nakano, Miyagi-ken, JP;

Tadashi Kumagai, Fukushima-ken, JP;

Tomofumi Oba, Miyagi-ken, JP;

Tadahiro Ohmi, Miyagi-ken, JP;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01J 7/24 (2006.01); C23C 16/00 (2006.01);
U.S. Cl.
CPC ...
Abstract

A plasma processing apparatus includes a radio frequency generator, a plasma processing chamber, a matching circuit for impedance matching between the radio frequency generator and the plasma processing chamber, and matching circuit adjusting means for matching the output impedance of the matching circuit to the impedance of the plasma processing chamber in a nondischarge state. The matching circuit is a product matching circuit that is produced based on a circuit constant of an adjusting matching circuit. The adjusting matching circuit is disposed between the radio frequency generator and the plasma processing chamber for a required plasma treatment and the circuit constant is determined by impedance matching between the radio frequency generator and the plasma processing chamber so that the adjusting matching circuit matches the load impedance of the plasma processing chamber.


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