Plasma etching methods and methods of forming memory devices comprising a chalcogenide comprising layer received operably proximate conductive electrodes

Abstract

In one implementation, a plasma etching method comprises forming a GeSechalcogenide comprising layer over a substrate. A mask comprising an organic masking material is formed over the GeSechalcogenide comprising layer. The mask comprises a sidewall. At least prior to plasma etching the GeSecomprising layer, the sidewall of the mask is exposed to a fluorine comprising material. After said exposing, the GeSechalcogenide comprising layer is plasma etched using the mask and a hydrogen containing etching gas. The plasma etching forms a substantially vertical sidewall of the GeSechalcogenide comprising layer which is aligned with a lateral outermost extent of the sidewall of the mask.