The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 22, 2006
Filed:
Oct. 14, 2004
Yao-chi Chang, Tainan, TW;
Tao-sheng Chang, Tainan, TW;
Yao-Chi Chang, Tainan, TW;
Tao-Sheng Chang, Tainan, TW;
Taiwan Semiconductor Manufacturing Co., Ltd., Hsin-Chu, TW;
Abstract
STI structures with step height control are produced using a relatively thin nitrogen-containing layer formed over a substrate. The nitrogen-containing layer may consist of SiN and SiON films with a combined thickness of 900 angstroms or less. Trench openings are formed to extend through the nitrogen-containing layer and into the substrate. Chemical vapor deposition is used to form a dielectric such as an oxide within the trench openings and over the top surface of the nitrogen-containing layer. A polishing operation is used to partially polish the CVD dielectric layer leaving a reduced thickness over the nitrogen-containing layer, and then a dry etch is used to remove the dielectric from over the nitrogen-containing layer and uniformly recede the top surface of the dielectric within the trench. Dishing effects are avoided. The nitrogen-containing layer is removed to produce STI structures with step heights of less than 500 angstroms.