The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 22, 2006

Filed:

Jul. 07, 2004
Applicants:

Chien-hsing Lee, Jhubei, TW;

Chin-hsi Lin, Hsinchu, TW;

Jhyy-cheng Liou, Jhubei, TW;

Inventors:

Chien-Hsing Lee, Jhubei, TW;

Chin-Hsi Lin, Hsinchu, TW;

Jhyy-Cheng Liou, Jhubei, TW;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/8236 (2006.01);
U.S. Cl.
CPC ...
Abstract

The present invention relates to a multi-level read only memory cell that can store two bits and the fabrication method thereof. The multi-level ROM cell has the storage capacity of two bits and the resultant NAND type ROM memory array can provide four logic states of two bits, thus increasing the data storage capacity.


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