The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 15, 2006
Filed:
Jul. 30, 2004
Masanobu Nogome, Bizen, JP;
Akiyoshi Tamura, Suita, JP;
Keiichi Murayama, Okayama, JP;
Matsushita Electric Industrial Co., Ltd., Osaka, JP;
Abstract
A semiconductor device is provided having an improved breakdown voltage on high power output, the semiconductor device comprising a n-type GaAs subcollector layer, a n-type GaAs intermediate collector layer formed between a collector layer and the subcollector layer, the n-type GaAs collector layer, a p-type GaAs base layer, a n-type InGaP second emitter layer, a n-type GaAs first emitter layer, and a n-type InGaAs emitter contact layer, and a concentration of impurities in the intermediate collector layer is higher than a concentration of impurities in the collector layer and is lower than a concentration of impurities in the subcollector layer.