The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 15, 2006
Filed:
May. 25, 2004
Jun-ya Ishizaki, Annaka, JP;
Jun-ya Ishizaki, Annaka, JP;
Shin-Etsu Handotai Co., Ltd., Tokyo, JP;
Abstract
A light emitting devicehas a light emitting layer portionwhich comprises an active layercomposed of an MgZnO-type oxide semiconductor, a p-type cladding layeragain composed of an MgZnO-type oxide semiconductor, and an n-type cladding layer. On the p-type cladding layerof the light emitting layer portion, a light extraction layeris configured using an oxide, where the light extraction layerhas a refractive index at a dominant emission wavelength of light extracted from the active layersmaller than that of the cladding layers. This makes it possible to efficiently extract the light emitted from the light emitting layer portionto the external of the light emitting device. This is it successful in providing a high-light-extraction-efficiency light emitting device having the light emitting layer portion composed of an oxide semiconductor, and a method of fabricating the same.