The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 15, 2006
Filed:
Jun. 03, 2004
Ning Cheng, Cupertino, CA (US);
Clarence B. Ferguson, San Jose, CA (US);
Emmanuil H. Lingunis, San Jose, CA (US);
Minh Van Ngo, Fremont, CA (US);
Joerg Reiss, Sunnyvale, CA (US);
Jean Y. Yang, Sunnyvale, CA (US);
Jeffrey A. Shields, Sunnyvale, CA (US);
Cyrus Tabery, Sunnyvale, CA (US);
Ning Cheng, Cupertino, CA (US);
Clarence B. Ferguson, San Jose, CA (US);
Emmanuil H. Lingunis, San Jose, CA (US);
Minh Van Ngo, Fremont, CA (US);
Joerg Reiss, Sunnyvale, CA (US);
Jean Y. Yang, Sunnyvale, CA (US);
Jeffrey A. Shields, Sunnyvale, CA (US);
Cyrus Tabery, Sunnyvale, CA (US);
Spansion LLC, Sunnyvale, CA (US);
Abstract
A method of protecting a charge trapping dielectric flash memory cell from UV-induced charging, including fabricating a charge trapping dielectric flash memory cell in a semiconductor device; depositing over the charge trapping dielectric flash memory cell at least one UV-protective layer; forming at least one layer over the at least one UV-protective layer; and etching the at least one layer to form an opening therein with an etchant species selective to stop on a layer below the at least one UV-protective layer, wherein the UV-protective layer comprises a substantially UV-opaque material.