The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 08, 2006
Filed:
Mar. 04, 2002
Makoto Ebata, Tamano, JP;
Fusao Fujita, Tamano, JP;
Makoto Saito, Tamano, JP;
Mitsui Engineering & Shipbuilding Co., Ltd., Tokyo, JP;
Admap Inc., Tamano, JP;
Abstract
The object of the present invention is to provide a wafer having a structure of enabling an SiC wafer to be put to practical use as a wafer for monitoring a film thickness. For this purpose, an average surface roughness Ra of at least one surface of the SiC wafer is set to be substantially equivalent to a film thickness of a film to be deposited on an Si wafer to be measured. If several types are available to be deposited on an Si wafer to be measured, a minimum film thickness of the film among the several types is determined as an upper limit value, and the average surface roughness Ra of the film thickness measuring SiC wafer is set less than the upper limit value. More concretely, the surface roughness is set to be about 400 times as large as the average surface roughness of a product Si wafer, Ra being preferably set to be 0.08 μm or less. Accordingly, a hard and chemically resistant film thickness measuring wafer can be practically used as a film thickness monitoring wafer, even if not polished to the level of the product Si wafer, thereby obtaining a film thickness measuring monitor wafer that can be reduced in polishing cost and usable semi-permanently.