The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 08, 2006
Filed:
Dec. 28, 2000
Gunther Lehmann, Poughkeepsie, NY (US);
Axel Christoph Brintzinger, Livermore, CA (US);
Gabriel Daniel, Jamaica Estates, NY (US);
Gunther Lehmann, Poughkeepsie, NY (US);
Axel Christoph Brintzinger, Livermore, CA (US);
Gabriel Daniel, Jamaica Estates, NY (US);
Infineon Technologies AG, Munich, DE;
Abstract
A semiconductor device is provided which is formed of a wafer having on a surface thereof an area efficient arrangement of at least two antifuses in vertically stacked relation and sharing a common intermediate electrode therebetween. The arrangement includes at least one lower antifuse having a lower counter electrode and a lower fusible insulator portion defining a lower fuse element of an initial high electrical resistance state which interconnects the lower counter electrode with the common intermediate electrode, and at least one upper antifuse, which may be the same as or different from the lower antifuse, the upper antifuse having an upper counter electrode and an upper fusible insulator portion defining an upper fuse element of an initial high electrical resistance state which interconnects the upper counter electrode with the common intermediate electrode.