The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 08, 2006
Filed:
Sep. 08, 2003
Belford T. Coursey, Meridian, ID (US);
Belford T. Coursey, Meridian, ID (US);
Micron Technology, Inc., Boise, ID (US);
Abstract
A method used to form a semiconductor device comprises forming a layer such as a container capacitor layer having a bottom plate layer. The bottom plate layer is formed to define a receptacle, and a rim which defines an opening to an interior of the receptacle. The bottom plate layer is formed to have a smooth texture. Subsequently, an inhibitor layer is formed on the rim of the bottom plate layer while a majority of the receptacle defined by the bottom plate layer remains free from the inhibitor. With the inhibitor layer on the rim of the bottom plate layer, at least a portion of the receptacle is converted to have a rough texture, such as to hemispherical silicon grain (HSG) polysilicon, while subsequent to the conversion the smooth texture of the rim which defines the opening to the interior of the receptacle remains. A resulting structure is also described.