The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 08, 2006

Filed:

Sep. 28, 2000
Applicants:

William R. Roche, Beaverton, OR (US);

David Donggang Wu, Austin, TX (US);

Massud Aminpur, Dresden, DE;

Scott D. Luning, Austin, TX (US);

Inventors:

William R. Roche, Beaverton, OR (US);

David Donggang Wu, Austin, TX (US);

Massud Aminpur, Dresden, DE;

Scott D. Luning, Austin, TX (US);

Assignee:

Advanced Micro Devices, Inc., Austin, TX (US);

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/3205 (2006.01); H01L 21/4763 (2006.01);
U.S. Cl.
CPC ...
Abstract

The present invention is directed to a semiconductor device having a gate electrode includes of a plurality of sidewalls, each having a recess formed therein. The present invention is also directed to a method of forming a semiconductor device. In one illustrative embodiment, the method comprises forming a layer of dopant material in a layer of polysilicon and etching the layer of polysilicon to define a gate electrode having a plurality of sidewalls, each of which have a recess formed therein.


Find Patent Forward Citations

Loading…