The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 7087271 B1

PDF
Full Text
Expired
Date of Patent:
Aug. 08, 2006

Filed:

Jun. 28, 2002
Applicants:

Shi-woo Rhee, Kyungsangbuk-do, KR;

Sang-ki Kwak, Kyungsangbuk-do, KR;

Inventors:

Shi-Woo Rhee, Kyungsangbuk-do, KR;

Sang-Ki Kwak, Kyungsangbuk-do, KR;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H05H 1/24 (2006.01);
U.S. Cl.
CPC ...
Abstract

A low dielectric constant hydrogenated silicon-oxycarbide (SiCO:H) film is prepared by bringing an organosilicon or organosilicate compound having at least one vinyl or ethynyl group, or a mixture of a saturated organosilicon or organosilicate compound and an unsaturated hydrocarbon into contact with a substrate in the presence of an O-containing gas plasma.


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Rhee, Shi-Woo. (2006). Method for preparing low dielectric films (U.S. Patent No. 7087271). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/7087271

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