The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 01, 2006

Filed:

Nov. 21, 2002
Applicant:

Arun Ananth Aiyer, Fremont, CA (US);

Inventor:

Arun Ananth Aiyer, Fremont, CA (US);

Assignee:

Verity Instruments, Inc., Carrollton, TX (US);

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G01J 4/00 (2006.01); G01B 11/24 (2006.01);
U.S. Cl.
CPC ...
Abstract

An optical profilometer apparatushaving a stage with a support surfaceon which a wafer substrate may rest. The wafer stage is capable of moving the wafer in (x, y) or (r, θ) mode to achieve complete wafer scan. Polarized light from a monochromatic sourceis directed towards the wafer surface. Surface profiling is achieved by sensing beam shift on a segmented sensor caused by level/height change at the wafer surface. In preferred embodiment of the profilometer, a single light beam is engineered to propagate in two orthogonal planes of incidence so that it becomes sensitive to height/level change on the wafer while being insensitive to local slope or wafer tilt. In another embodiment, slope of surface feature is measured. By integrating slope over the measurement spot, local feature height is obtained. This is particularly useful when the beam shift due to feature height change is below detection sensitivity. Since the beam propagates in two orthogonal planes of incidence, the slope measurement sensitivity and hence height sensitivity is doubled. The entire wafer surface can be profiled using (x, y) or (r, θ) scan of the wafer surface.


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