The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 01, 2006
Filed:
Aug. 13, 2004
Jung-hyun Lee, Yongin-si, KR;
Bum-seok Seo, Seoul, KR;
Jung-hyun Lee, Yongin-si, KR;
Bum-seok Seo, Seoul, KR;
Samsung Electronics Co., Ltd., Suwon-si, KR;
Abstract
A capacitor of a semiconductor device includes a lower electrode, a dielectric layer, including a plurality of band gaps, formed on the lower electrode, and an upper electrode formed on the dielectric layer. A band gap of the plurality of band gaps in the dielectric layer that is not adjacent to either the lower electrode or the upper electrode is smaller than a band gap of the plurality of band gaps in the dielectric layer adjacent to the lower electrode and a band gap of the plurality of band gaps in the dielectric layer adjacent to the upper electrode.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile