The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 01, 2006
Filed:
Apr. 04, 2005
Sun Woon Kim, Seoul, KR;
Dong Hyun Cho, Kyungki-do, KR;
Je Won Kim, Kyungki-do, KR;
Kyu Han Lee, Kyungki-do, KR;
Jeong Tak OH, Kyungki-do, KR;
Dong Joon Kim, Seoul, KR;
Sun Woon Kim, Seoul, KR;
Dong Hyun Cho, Kyungki-do, KR;
Je Won Kim, Kyungki-do, KR;
Kyu Han Lee, Kyungki-do, KR;
Jeong Tak Oh, Kyungki-do, KR;
Dong Joon Kim, Seoul, KR;
Samsung Electro-Mechanics Co., Ltd., Suwon, KR;
Abstract
The present invention provides a nitride based semiconductor device comprising an active layer having a quantum well layer and a quantum barrier layer, wherein the device includes an electron emitting layer formed of at least two repeats of a first nitride semiconductor layer and a second nitride semiconductor layer having different compositions between a n-type nitride semiconductor layer and the active layer, the first nitride semiconductor layer has an energy band gap greater than that of the quantum well layer, smaller than that of the quantum barrier layer, and decreasing closer to the active layer, and the second nitride semiconductor layer has an energy band gap at least higher than that of the adjacent first nitride semiconductor layer(s) and has a thickness capable of tunneling electrons.