Method of fabricating multilayer interconnect wiring structure having low dielectric constant insulator film with enhanced adhesivity

Abstract

A method for fabricating a high density semiconductor integrated circuit device with a multilayer interconnect wiring structure is disclosed. This structure has a low-dielectric constant insulator film including an organic thin-film with its dielectric constant ranging from about 2.0 to about 2.4. To fabricate the multilayer wiring structure, a substrate with an inorganic film for use as an underlayer dielectric film is prepared. Then, apply plasma processing, such as plasma-assisted chemical vapor-phase growth, to a top surface of the inorganic underlayer dielectric film in environment that contains therein organic silane-based chemical compounds, thereby to form on the inorganic film surface a hydrophobic surface layer with a contact angle with water being 50° or higher. Next, form on the plasma-processed hydrophobic surface an organic film including a fluorinated aromatic carbon hydride polymer film. The resulting adhesion between the stacked inorganic and organic films is thus enhanced while at the same time reducing or minimizing electrical resistivity and capacitance of the multilayer structure.