The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 01, 2006
Filed:
Oct. 13, 2004
Applicant:
Pei-yang Yan, Saratoga, CA (US);
Inventor:
Pei-Yang Yan, Saratoga, CA (US);
Assignee:
Intel Corporation, Santa Clara, CA (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G03F 9/00 (2006.01);
U.S. Cl.
CPC ...
Abstract
An attenuated phase-shifting photomask (APSM) provides adjustment of attenuation from mask to mask. The APSM includes a multilayer substrate, a buffer thin film coupled to the substrate, and a top layer thin film on top of the buffer thin film. The thin films are etched with a circuit pattern to form a photomask, and are chosen to have certain thicknesses which would provide adjustment of attenuation within a specified attenuation operating range and appropriate phase shift without changing said buffer thin film and said top layer thin film.