The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 25, 2006

Filed:

Dec. 03, 2004
Applicant:

Stephen L. Casper, Boise, ID (US);

Inventor:

Stephen L. Casper, Boise, ID (US);

Assignee:

Micron Technology, Inc., Boise, ID (US);

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G11C 7/00 (2006.01);
U.S. Cl.
CPC ...
Abstract

A dynamic random access memory ('DRAM') device is operable in either a normal refresh mode or a static refresh mode, such as a self-refresh mode. A cell plate voltage selector couples a voltage of one-half the supply voltage to the cell plate of a DRAM array in a normal refresh mode and in the static refresh mode when memory cells are being refreshed. In between refresh bursts in the static refresh mode, the cell plate voltage selector couples a reduced voltage to the cell plate. This reduces the voltage reduces the voltage across diode junctions formed between the source/drain of respective access transistor and the substrate. The reduced voltage reduces the discharge current flowing from memory cells capacitors, thereby allowing a reduction in the required refresh rate and a consequential reduction in power consumption.


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