The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 18, 2006
Filed:
Sep. 22, 2004
Sungchul Lee, Cupertino, CA (US);
Sheunghee Park, Pleasanton, CA (US);
Yue-song He, San Jose, CA (US);
Ming Sang Kwan, San Leandro, CA (US);
Sungchul Lee, Cupertino, CA (US);
Sheunghee Park, Pleasanton, CA (US);
Yue-Song He, San Jose, CA (US);
Ming Sang Kwan, San Leandro, CA (US);
Spansion L.L.C., Sunnyvale, CA (US);
Abstract
A method is provided for erasing a memory cell having a substrate, a control gate, a floating gate, a source region and a drain region. The method includes pre-programming the memory cell to raise a threshold voltage of the memory cell to a first predetermined level, wherein pre-programming the memory cell does not include a verification process for ensuring that the threshold voltage of the memory cell has been raised to the first predetermined level. The memory cell may be erased to lower the threshold voltage of the memory cell to a second predetermined level.