The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 18, 2006
Filed:
Sep. 16, 2004
Tetsuo Hatakeyama, Yokohama, JP;
Takashi Shinohe, Yokosuka, JP;
Tetsuo Hatakeyama, Yokohama, JP;
Takashi Shinohe, Yokosuka, JP;
Kabushiki Kaisha Toshiba, Tokyo, JP;
Abstract
A high-breakdown-voltage semiconductor device includes a high-resistance semiconductor layer, first trenches formed on the surface thereof in a longitudinal plane shape and in parallel, a Schottky electrode formed thereon and sandwiched between adjacent first trenches, a first region having an opposite conductivity type to the semiconductor layer continuously disposed in a sidewall and a bottom of each of the first trenches, a sidewall insulating film disposed on the sidewall, a second region of the opposite conductivity type disposed in the bottom of each of the first trenches, a third region disposed on the opposite surface of the semiconductor layer, a control electrode filling each of the first trenches in contact with the second region and connected to the Schottky electrode, a backside electrode formed on the third region, wherein second trenches communicate with the first trenches at both ends of longitudinal sides thereof, and the Schottky electrode is surrounded by the first and second trenches.