The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 18, 2006
Filed:
Oct. 06, 2004
Applicant:
Tetsuya Taguwa, Tokyo, JP;
Inventor:
Tetsuya Taguwa, Tokyo, JP;
Assignee:
Elpida Memory, Inc., , JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/148 (2006.01);
U.S. Cl.
CPC ...
Abstract
A semiconductor device has a dual-gate electrode structure. The gate electrode has a layered structure including a doped polysilicon film, WSifilm, WN film and a W film. The WSifilm formed on the polysilicon film in the P-channel area is formed of a number of WSiparticles disposed apart from one another, preventing a bilateral diffusion of impurities doped in the polysilicon film.