The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 18, 2006
Filed:
Dec. 13, 2004
Mark Philip D'evelyn, Niskayuna, NY (US);
Dong-sil Park, Niskayuna, NY (US);
Steven Francis Leboeuf, Schenectady, NY (US);
Larry Burton Rowland, Scotia, NY (US);
Kristi Jean Narang, Voorheeesville, NY (US);
Huicong Hong, Niskayuna, NY (US);
Stephen Daley Arthur, Glenville, NY (US);
Peter Micah Sandvik, Clifton Park, NY (US);
Mark Philip D'Evelyn, Niskayuna, NY (US);
Dong-Sil Park, Niskayuna, NY (US);
Steven Francis LeBoeuf, Schenectady, NY (US);
Larry Burton Rowland, Scotia, NY (US);
Kristi Jean Narang, Voorheeesville, NY (US);
Huicong Hong, Niskayuna, NY (US);
Stephen Daley Arthur, Glenville, NY (US);
Peter Micah Sandvik, Clifton Park, NY (US);
General Electric Company, Niskayuna, NY (US);
Abstract
A GaN crystal having up to about 5 mole percent of at least one of aluminum, indium, and combinations thereof. The GaN crystal has at least one grain having a diameter greater than 2 mm, a dislocation density less than about 10cm, and is substantially free of tilt boundaries.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile