The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 18, 2006
Filed:
Jan. 08, 2004
Jon A. Casey, Poughkeepsie, NY (US);
William J. Ferrante, Hyde Park, NY (US);
Edward W. Kiewra, Verbank, NY (US);
Carl J. Radens, LaGrangeville, NY (US);
William R. Tonti, Essex Junction, VT (US);
Jon A. Casey, Poughkeepsie, NY (US);
William J. Ferrante, Hyde Park, NY (US);
Edward W. Kiewra, Verbank, NY (US);
Carl J. Radens, LaGrangeville, NY (US);
William R. Tonti, Essex Junction, VT (US);
International Business Machines Corporation, Armonk, NY (US);
Abstract
A structure and method are provided for forming a thermistor. Isolation structures are formed in a substrate including at least an upper layer of a single crystal semiconductor. A layer of salicide precursor is deposited over the isolation region and the upper layer. The salicide precursor is then reacted with the upper layer to form a salicide self-aligned to the upper layer. Finally, the unreacted portions of the salicide precursor are then removed while preserving a portion of the salicide precursor over the isolation region as a body of the thermistor. An alternative integrated circuit thermistor is formed from a region of thermistor material in an embossed region of an interlevel dielectric (ILD).