The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 18, 2006
Filed:
Mar. 07, 2005
Applicant:
Tianhong Zhang, Boise, ID (US);
Inventor:
Tianhong Zhang, Boise, ID (US);
Assignee:
Micron Technology, Inc., Boise, ID (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/00 (2006.01);
U.S. Cl.
CPC ...
Abstract
A method of forming a sharp silicon structure, such as a silicon field emitter, includes oxidizing the silicon structure to form an oxide layer thereon, then removing the oxide layer. Oxidizing may occur at a low temperature and form a relatively thin (e.g., about 20 Å to about 40 Å) oxide layer on the silicon field emitter. The oxide layer may be removed by etching. A silicon field emitter that has been fabricated in accordance with the method is substantially free of crystalline defects and may include an emitter tip having a diameter as small as about 40 Å to about 20 Å or less.