The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 7075169 B1

PDF
Full Text
Expired
Date of Patent:
Jul. 11, 2006

Filed:

Sep. 04, 2003
Applicants:

Yoshihiro Minami, Fujisawa, JP;

Takashi Yamada, Ebina, JP;

Yusuke Kohyama, Poughkeepsie, NY (US);

Tsutomu Sato, Poughquag, NY (US);

Hajime Nagano, Yokohama, JP;

Inventors:

Yoshihiro Minami, Fujisawa, JP;

Takashi Yamada, Ebina, JP;

Yusuke Kohyama, Poughkeepsie, NY (US);

Tsutomu Sato, Poughquag, NY (US);

Hajime Nagano, Yokohama, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/72 (2006.01);
U.S. Cl.
CPC ...
Abstract

A hollow region is formed in a silicon substrate. A plurality of openings formed in the silicon layer on the hollow region is filled with a buried film. The bottom portion of the hollow region is formed with a plurality of silicon pillars, which support the silicon layer.


Find Patent Forward Citations

Minami, Yoshihiro. (2006). Semiconductor device having a hollow region and method of manufacturing the same (U.S. Patent No. 7075169). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/7075169

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